Y.S. Park, H.G. Lee, C.M. Yang, D.S. Kim, J.H. Bae, S. Cho, J.-H. Lee, I.M. Kang,
"Fabrication and Characterization of a GaN Light-emitting Diode (LED) with a Centered Island Cathode",
Journal of the Optical Society of Korea, 16, 349, 2012.

Y.J. Yoon, S.Y. Woo, J.H. Seo, J.S. Lee, Y.S. Park, J.-H. Lee, I.M. Kang,
"Design Optimization of Vertical Double-gate Tunneling Field-effect Transistors",
Journal of the Korean Physical Society, 61, 1679, 2012.

J.H. Lee, J.H. Jeong, J.-H. Lee,
"Normally Off GaN Power MOSFET Grown on Sapphire Substrate With Highly Resistive Undoped Buffer Layer",
IEEE ELECTRON DEVICE LETTERS, 33, 1426, 2012.

L. Pang, Y. Lian, D.S. Kim, J.-H. Lee, K. Kim,
"AlGaN/GaN MOSHEMT Wiith High-Quality Gate-SiO2 Achieved by Room-Temperature Radio Frequency Magnetron Sputtering",
IEEE TRANSACTIONS ON ELECTRON DEVICES, 59, 2650, 2012.

K.-I. Na, K.-H. Park, S.Cristoloveanu, J.A. Chroboczek, A. Ohata, W. Xiong, J.-H. Lee, Y. Bae,
"Low-frequency noise and mobility in triple-gate silicon-on-insulator transistors: Evidence for volume inversion effects",
Microelectronic Engineering, 98, 85, 2012.

C.M. Yang, D.S. Kim, Y.S. Park, J.H. Lee, Y.S. Lee, J.-H. Lee,
"Enhancement in Light Extraction Efficiency of GaN-Based Light-Emitting Diodes Using Double Dielectric Surface Passivation",
Optics and Photonics Journal, 2, 185, 2012.

X. Jin, X. Liu, R. Chuai, J.-H. Lee, J.H. Lee,
"Modelling of the nanoscale channel length effect on the subthreshold characteristics of junctionless field-effect transistors with a symmetric double-gate structure",
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 45, 375102-1, 2012.

K.-I. Na, S. Cristoloveanu, W. Xiong, J.-H. Lee, and Y. Bae,
"Impact of Gate Misalignment in Triple-Gate MOSFETs Fabricated on SOI Substrate",
ECS Solid State Letters, 1, Q20, 2012.

J.H. Lee, J.K. Yoo, H.S. Kang, J.-H. Lee,
"840 V/6 A-AlGaN/GaN Schottky Barrier Diode With Bonding Pad Over Active Structure Prepared on Sapphire Substrate",
IEEE ELECTRON DEVICE LETTERS, 33, 1171, 2012.

B.K. Jung, C.J. Lee, T.H. Kim, D.S. Kim, M.B. Lee, J.-H. Lee, S.H. Hahm,
"GaN schottky barrier MOSFET using transparent source/drain electrodes for UV-optoelectronic integration",
Solid-State Electronics, 73, 78, 2012.

M. Lee, H. Im, H. Kim, D.S. Kim, J.-H. Lee, C.H. Roh, C.-K. Hahn,
"Effects of Thermal Annealing Treatment on the Optical and the Electrical Properties of GaN Films Grown on Si Substrates",
Journal of the Korean Physical Society, 60, 1809, 2012.

Y. Bae, J.-H. Lee, A. Ohata, T. Signamarcheix, S. Cristoloveanu,
"Electrical Properties of P-MOSFETs on Amorphized and Regrown (110) SOI Film for Hybrid Orientation Technology",
Journal of the Korean Physical Society, 60, 1713, 2012.

J.H. Lee, J.-H. Lee,
"Abnormal Electrical and Optical Characteristics of InGaN-Based LEDs by Current Stress-Time-Dependent Annihilation",
IEEE JOURNAL OF QUANTUM ELECTRONICS, 48, 635, 2012.

J.H. Lee, J.H. Jeong, J.-H. Lee,
"Enhanced Electrical Characteristics of AlGaN-Based SBD With In Situ Deposited Silicon Carbon Nitride Cap Layer",
IEEE ELECTRON DEVICE LETTERS, 33, 492, 2012.

C.M. Yang, D.S. Kim, S.G. Lee, J.H. Lee, Y. S. Lee, J.-H. Lee,
"Improvement in Electrical and Optical Performances of GaN-Based LED With SiO2/Al2O3 Double Dielectric Stack Layer",
IEEE ELECTRON DEVICE LETTERS, 33, 564, 2012.

A. Diab, E. Saracco, I. Ionica, C. Bonafos, J. F. Damlencourt, J.-H. Lee, S. Cristoloveanu,
"Electrical Transport at Room and Low Temperature in 3D Vertically Stacked SiGe and SiGeC Nanowires",
Journal of The Electrochemical Society, 159, H467, 2012.

S.-J. Chang, M. Bawedin, W. Xiong, J.-H. Lee, J.-H. Lee, S. Cristoloveanu,
"FinFlash with buried storage ONO layer for flash memory application",
Solid-State Electronics, 70, 59, 2012.

D.S. Kim, K.S. Im, H.S. Kang, K.W. Kim, S.B. Bae, J.K. Mun, E.S. Nam, J.H. Lee,
"Normally-Off AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistor with Recessed Gate and p-GaN Back-Barrier",
Japanese Journal of Applied Physics, 51, 034101, 2012.