J.H. Lee, N.S. Kim, J.H. Lee,
"Development of Chip Separation Technique for InGaN-Based Light Emitting Diodes",
IEEE JOURNAL OF QUANTUM ELECTRONICS, 47, 1493, 2011.

K.W. Kim, S.D. Jung, D.S. Kim, H.S. Kang, K.S. Im, J.J. Oh, J.B. Ha, J.K. Shin, J.H. Lee,
"Effects of TMAH Treatment on Device Performance of Normally Off Al2O3/GaN MOSFET",
IEEE ELECTRON DEVICE LETTERS, 32, 1376, 2011.

J.H. Lee, J.H. Lee,
"High-Power InGaN-Based LED With Tunneling-Junction-Induced Two-Dimensional Electron Gas at AlGaN_GaN Heterostructure",
IEEE TRANSACTIONS ON ELECTRON DEVICES, 58, 3058, 2011.

H.S. Kang, J.B. Ha, J.H. Lee, C.K. Choi, J.Y. Lee, K.M. Lee,
"Effect of catalyst for nickel films for NiSi formation with improved interface roughness",
Thin Solid Films, 519, 6658, 2011.

C.J. Lee, D.S. Kim, J.Y. Yun, J.H. Lee, S.Y. Sung, Y.W. Heo, S.H. Hahm,
"Body-bias Effect in a GaN Schottky Barrier MOSFET Fabricated on a Silicon (111) Substrate with an ITO Source/Drain",
Journal of the Korean Physical Society, 59, 294, 2011.

K.W. Kim, S.D. Jung, D.S. Kim, K.S. Im, H.S. Kang, J.H. Lee, Y. Bae, D.H. Kwon, S. Cristoloveanu,
"Charge trapping and interface characteristics in normally-off Al2O3/GaN-MOSFETs",
Microelectronic Engineering, 88, 1225, 2011.

D.S. Kim, T.H. Kim, C.H. Won, H.S. Kang, K.W. Kim, K.S. Im, Y.S. Lee, S.H. Hahm, J.H. Lee, J.H. Lee, J.B. Ha, Y. Bae, S. Cristoloveanu,
"Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method",
Microelectronic Engineering, 88, 1221, 2011.

D.S. Kim, S.N. Kim, K.W. Kim, K.S. Im, H.S. Kang, E.H. Kwak, J.H. Lee, S.G. Lee, J.B. Ha,
"High Performance in a Normally-off Al2O3/GaN MOSFET Based on an AlGaN/GaN Heterostructure with a p-GaN Buffer Layer",
Journal of the Korean Physical Society, 58, 1500, 2011.

K.W. Kim, D.S. Kim, K.S. Im, J.H. Lee, B.J. Kwon, H.S. Kwack, S. Beck, Y.H. Cho,
"Strong luminescence of two-dimensional electron gas in tensile-stressed AlGaN/GaN heterostructures grown on Si substrates",
Applied Physics Letters, 98, 141917, 2011.