J.B. Ha, D.S. Kim, K.S. Im, K.W. Kim, H.S. Kang, K.Y. Park, J.H. Lee,
"Performance Enhancement of Normally-off PAALD-Al2O3/GaN MOSFET with Post-Deposition Annealing",
Japanese Journal of Applied Physics, 49, 126501, 2010.

B.W. Kim, S.H. Park, J.H. Lee, Y.T. Moon,
"Effect of In Composition on Two-Dimensional Electron Gas in Wurtzite AlGaN/InGaN Heterostructures",
Chinese Physics Letters, 27, 118501, 2010.

J.B. Ha, H.S. Kang, K.J. Baek, J.H. Lee,
"Enhancement of Device Performance in LDMOSFET by Using Dual-Work-Function-Gate Technique",
IEEE ELECTRON DEVICE LETTERS, 31, 848, 2010.

K.S. Im, J.B. Ha, K.W. Kim, J.S. Lee, D.S. Kim, H.C. Choi, J.H. Lee,
"AlGaN/GaN-based normally-off GaN MOSFET with stress controlled 2DEG source and drain",
Physica Status Solidi (C), 7, 2013, 2010.

C. Ostermaier, S.I. Ahn, K. Potzger, M. Helm, J. Kuzmik, D. Pogany, G. Strasser, J.H. Lee, S.H. Hahm, J.H. Lee,
"Study of Si implantation into Mg-doped GaN for MOSFETs",
Physica Status Solidi (C), 7, 1964, 2010.

J.H. Lee, S.M. Hwang, N.S. Kim, J.H. Lee,
"InGaN-Based High-Power Flip-Chip LEDs With Deep-Hole-Patterned Sapphire Substrate by Laser Direct Beam Drilling",
IEEE ELECTRON DEVICE LETTERS, 31, 698, 2010.

D.E. Kim, B.H. Kang, S.K. Hong, S.Y. Lee, B.W. Shin, K.J. Kim, S.H. Yeom, J.H. Lee, D.H. Kwon, H.R. Lee, S.W. Kang,
"Evaluation of thin film passivation using inorganic Mg-Zn-F heterointerface for polymer light emitting diode",
Thin Solid Films, 518, 4010, 2010.

J.H. Lee, J.H. Lee,
"Enhanced Output Power of InGaN-Based Light-Emitting Diodes With AlGaN/GaN Two-Dimensional Electron Gas Structure",
IEEE ELECTRON DEVICE LETTERS, 31, 455, 2010.

X. Jin, J.H. Lee, J.H. Lee,
"A continuous current model of fully-depleted symmetric double-gate MOSFETs considering a wide range of body doping concentrations",
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 25, 055018, 2010.

J.H. Lee, N.S. Kim, S.S. Hong, J.H. Lee,
"Enhanced Extraction Efficiency of InGaN-Based Light-Emitting Diodes Using 100-kHz Femtosecond-Laser-Scribing Technology",
IEEE ELECTRON DEVICE LETTERS, 31, 213, 2010.

K.S. Im, J.B. Ha, K.W. Kim, J.S. Lee, D.S. Kim, S.H. Hahm, J.H. Lee,
"Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate",
IEEE ELECTRON DEVICE LETTERS, 31, 192, 2010.

J.H. Lee, D.Y. Lee, B.W. Oh, J.H. Lee,
"Comparison of InGaN-Based LEDs Grown on Conventional Sapphire and Comparison of InGaN-Based LEDs Grown on Conventional Sapphire and Cone-Shape-Patterned Sapphire Substrate",
IEEE TRANSACTIONS ON ELECTRON DEVICES, 57, 157, 2010.

J.H. Lee, N.S. Kim, S.S. Hong, J.H. Lee,
"Enhanced Extraction Efficiency of InGaN-Based Light-Emitting Diodes Using 100-kHz Femtosecond-Laser-Scribing Technology",
IEEE ELECTRON DEVICE LETTERS, 31, 213, 2010.

J.H. Ha, S.W. Yun, J.H. Lee,
"Effect of poly silicon thickness on the formation of Ni-FUSI gate by using atomic layer deposited nickel film",
Current Applied Physics, 10, 41, 2010.

K.W. Kim, D.S. Kim, J.H. Lee, J.H. Lee, C.K. Hahn,
"Effect of InN Interlayer in Growth of GaN on Si Substrates",
Electrochemical and Solid-State Letters, 13, 66, 2010.

X. Liu, X. Jin, J.H. Lee, L. Zhu, H.I.Kwon, J.H. Lee,
"A full analytical model of fringing-field-induced parasitic capacitance for nano-scaled MOSFETs",
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 25, 015008, 2010.